Axt, Inc.
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
3
Ending by 2030
May 2027
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.
- 1 fee due Dec 20, 2026The maintenance fee for Low etch pit density 6 inch semi-insulating gallium arsenide wafers (US 11,680,340) comes due Dec 20, 2026. Unpaid by Jun 21, 2027, it lapses early.
Recent changes
- 1 of the patents on this record was granted since Aug 16, 2026
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 8,361,225 | Low etch pit density (EPD) semi-insulating III-V wafers In force · From the USPTO record | In force | From the USPTO record | |
| US 7,566,641 | Low etch pit density (EPD) semi-insulating GaAs wafers In force · From the USPTO record | In force | From the USPTO record | |
| US 8,318,042 | Systems, methods and solutions for chemical polishing of GaAs wafers In force · From the USPTO record | In force | From the USPTO record | |
| US 8,231,727 | Crystal growth apparatus and method In force · From the USPTO record | In force | From the USPTO record | |
| US 8,506,706 | Systems, methods and substrates of monocrystalline germanium crystal growth In force · From the USPTO record | In force | From the USPTO record | |
| US 8,647,433 | Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same In force · From the USPTO record | In force | From the USPTO record | |
| US 12,084,790 | Low etch pit density 6 inch semi-insulating gallium arsenide wafers In force · From the USPTO record | In force | From the USPTO record | |
| US 12,276,044 | Low etch pit density gallium arsenide crystals with boron dopant In force · From the USPTO record | In force | From the USPTO record | |
| US 12,054,851 | Low Etch Pit Density, Low Slip Line Density, and Low Strain Indium Phosphide In force · High confidence | In force | High confidence | |
| US 12,735,808 | Low Etch Pit Density, Low Slip Line Density, and Low Strain Indium Phosphide In force · High confidence | In force | High confidence |
Also on record, not counted in the 13: 2 lapsed for an unpaid fee · 14 ended at full term · 1 surrendered on reissue. List them
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.
2 pending · 6 no status recorded