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Method of Forming a Fully Substrate-Isolated FinFET Transistor

Bell Semiconductor, LLC

A patent family: one line of work, grouped by real continuity rather than by a technology label inferred from titles. 3 of these applications claim priority to application 13/725,528, filed Dec 21, 2012. A shared origin can cover several different claimed inventions, which is why members here may not share a title. In-force patents first, soonest term end first, then patent number. Expired patents follow, in the same order.
PatentTitleHolderStatusExpiresTime remainingConfidence
US 9,893,147Fully Substrate-Isolated FinFET Transistor
In force
 · High confidence
Bell Semiconductor, LLCIn force
High confidence
US 10,170,546Fully Substrate-Isolated FinFET Transistor
In force
 · High confidence
Bell Semiconductor, LLCIn force
High confidence
US 8,956,942Method of Forming a Fully Substrate-Isolated FinFET Transistor
In force
 · High confidence
Bell Semiconductor, LLCIn force
High confidence
US 9,520,393Fully Substrate-Isolated FinFET Transistor
In force
 · High confidence
Bell Semiconductor, LLCIn force
High confidence
4 of 4 records shown. In-force patents first, soonest term end first, then patent number. Expired patents follow, in the same order.
Updated Nov 15, 2026 · includes USPTO assignment & status data published Nov 15, 2026 and grant & fee data published Nov 10, 2026 (weekly) · how we know
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
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