Crossbar, Inc.
48 more in force are now held by other companies
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
Recorded under 2 name spellings.
11
Ending by 2030
Jun 2030
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.
- 3 fees due Nov 14 to 19, 2026 · next Nov 14
- 5 fees due Dec 2 to 30, 2026 · next Dec 2
- 3 fees due Jan 9 to 28, 2027 · next Jan 9
- 2 fees due Feb 15 to 20, 2027 · next Feb 15
- 1 fee due Mar 10, 2027The maintenance fee for Logical to Physical Translation for Two-Terminal Memory (US 10,409,714) comes due Mar 10, 2027. Unpaid by Sep 10, 2027, it lapses early.
- 7 fees due Apr 3 to 22, 2027 · next Apr 3
- 6 fees due May 3 to 26, 2027 · next May 3
- 3 fees due Jun 5 to 30, 2027 · next Jun 5
- 2 fees due Jul 21 to 26, 2027 · next Jul 21
- 3 fees due Aug 2 to 23, 2027 · next Aug 2
- 3 fees due Sep 5 to 26, 2027 · next Sep 5
- 2 fees due Oct 23 to 30, 2027 · next Oct 23
Recent changes
- 1 of the patents on this record was granted since Aug 16, 2026
- 1 term has ended since Aug 16, 2026
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 8,787,069 | Write and Erase Scheme for Resistive Memory Device In force · High confidence | In force | High confidence | |
| US 8,988,927 | Non-Volatile Variable Capacitive Device Including Resistive Memory Cell In force · High confidence | In force | High confidence | |
| US 9,437,297 | Write and Erase Scheme for Resistive Memory Device In force · High confidence | In force | High confidence | |
| US 9,036,400 | Method and Structure of Monolithically Integrated Ic and Resistive Memory Using Ic Foundry-Compatible Processes In force · High confidence | In force | High confidence | |
| US 9,601,692 | Hetero-Switching Layer in a Rram Device and Method In force · Low confidence | In force | Low confidence | |
| US 9,035,276 | Stackable Non-Volatile Resistive Switching Memory Device and Method In force · High confidence | In force | High confidence | |
| US 10,224,370 | Device Switching Using Layered Device Structure In force · High confidence | In force | High confidence | |
| US 8,675,384 | Circuit for Concurrent Read Operation and Method Therefor In force · High confidence | In force | High confidence | |
| US 9,047,939 | Circuit for Concurrent Read Operation and Method Therefor In force · High confidence | In force | High confidence | |
| US 8,088,688 | P+ Polysilicon Material on Aluminum for Non-Volatile Memory Device and Method In force · High confidence | In force | High confidence |
Also on record, not counted in the 168: 48 patents in force now held by others · 38 lapsed for an unpaid fee · 1 ended at full term · 2 past the fee grace period · 1 surrendered on reissue. List them
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.
3 pending · 13 abandoned · 1 no status recorded