Efficient Power Conversion Corporation
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
Recorded under 3 name spellings.
8
Ending by 2030
Apr 2030
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.
- 4 fees due Dec 4 to 27, 2026 · next Dec 4
- 2 fees due Apr 22 to 27, 2027 · next Apr 22
- 3 fees due Jun 15, 2027
- 2 fees due Sep 24, 2027
- 2 fees due Oct 14 to 28, 2027 · next Oct 14
- 2 fees due Nov 3, 2027
Recent changes
- 1 term has ended since Aug 16, 2026
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 8,890,168 | Enhancement mode GaN HEMT device In force · From the USPTO record | In force | From the USPTO record | |
| US 10,312,335 | Gate with self-aligned ledge for enhancement mode GaN transistors In force · From the USPTO record | In force | From the USPTO record | |
| US 9,748,347 | Gate with self-aligned ledged for enhancement mode GaN transistors In force · From the USPTO record | In force | From the USPTO record | |
| US 8,350,294 | Compensated gate MISFET and method for fabricating the same In force · From the USPTO record | In force | From the USPTO record | |
| US 8,969,918 | Enhancement mode gallium nitride transistor with improved gate characteristics In force · From the USPTO record | In force | From the USPTO record | |
| US 8,823,012 | Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same In force · From the USPTO record | In force | From the USPTO record | |
| US 8,436,398 | Back diffusion suppression structures In force · From the USPTO record | In force | From the USPTO record | |
| US 8,785,974 | Bumped, self-isolated GaN transistor chip with electrically isolated back surface In force · From the USPTO record | In force | From the USPTO record | |
| US 8,431,960 | Dopant diffusion modulation in GaN buffer layers In force · From the USPTO record | In force | From the USPTO record | |
| US 8,404,508 | Enhancement mode GaN HEMT device and method for fabricating the same In force · From the USPTO record | In force | From the USPTO record |
Also on record, not counted in the 68: 2 lapsed for an unpaid fee. List them
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.
5 pending · 1 abandoned · 1 no status recorded