Force Mos Technology Co., Ltd.
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
Recorded under 2 name spellings.
53
Ending by 2030
May 2027
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.
- 1 fee due Feb 4, 2027The maintenance fee for Super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench (US 9,099,320) comes due Feb 4, 2027. Unpaid by Aug 4, 2027, it lapses early.
- 1 fee due Sep 22, 2027The maintenance fee for Super-junction trench MOSFET structure (US 9,293,527) comes due Sep 22, 2027. Unpaid by Mar 22, 2028, it lapses early.
- 1 fee due Nov 10, 2027The maintenance fee for Super-junction trench MOSFETs with closed cell layout (US 9,337,328) comes due Nov 10, 2027. Unpaid by May 10, 2028, it lapses early.
Recent changes
- 1 of the patents on this record was granted since Aug 16, 2026
- 1 term has ended since Aug 16, 2026
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 7,612,407 | Trenched MOSFET device configuration with reduced mask processes In force (reinstated) · From the USPTO record | In force (reinstated) | From the USPTO record | |
| US 7,511,357 | Trenched MOSFETs with improved gate-drain (GD) clamp diodes In force (reinstated) · From the USPTO record | In force (reinstated) | From the USPTO record | |
| US 7,812,409 | Trench MOSFET with cell layout, ruggedness, truncated corners In force (reinstated) · From the USPTO record | In force (reinstated) | From the USPTO record | |
| US 7,633,121 | Trench MOSFET with implanted drift region In force (reinstated) · From the USPTO record | In force (reinstated) | From the USPTO record | |
| US 7,800,185 | Closed trench MOSFET with floating trench rings as termination In force (reinstated) · From the USPTO record | In force (reinstated) | From the USPTO record | |
| US 7,646,058 | Device configuration and method to manufacture trench MOSFET with solderable front metal In force (reinstated) · From the USPTO record | In force (reinstated) | From the USPTO record | |
| US 7,956,410 | Trench MOSFET with trench gates underneath contact areas of ESD diode for prevention of gate and source shortage In force · From the USPTO record | In force | From the USPTO record | |
| US 7,629,634 | Trenched MOSFET with trenched source contact In force (reinstated) · From the USPTO record | In force (reinstated) | From the USPTO record | |
| US 7,626,231 | Integrated trench MOSFET and junction barrier schottky rectifier with trench contact structures In force · From the USPTO record | In force | From the USPTO record | |
| US 8,164,139 | MOSFET structure with guard ring In force · From the USPTO record | In force | From the USPTO record |
Also on record, not counted in the 87: 20 lapsed for an unpaid fee · 1 ended at full term. List them
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.
1 pending · 38 no status recorded