General Semiconductor, Inc.
Records under this name other than patents General Semiconductor, Inc. holds now: patents now held by others, patents whose terms have ended, and its applications, pending or abandoned.
Back to General Semiconductor, Inc.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 6,919,625 | Surface mount multichip devices Term ended Term ended Jul 16, 2023 · From the USPTO record | Term ended | Term ended Jul 16, 2023 | From the USPTO record |
| US 7,242,078 | Surface mount multichip devices Term ended Term ended Jul 10, 2023 · From the USPTO record | Term ended | Term ended Jul 10, 2023 | From the USPTO record |
| US 7,525,183 | Surface mount multichip devices Term ended Term ended Jul 10, 2023 · From the USPTO record | Term ended | Term ended Jul 10, 2023 | From the USPTO record |
| US 6,686,244 | Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step Term ended Term ended Apr 26, 2022 · From the USPTO record | Term ended | Term ended Apr 26, 2022 | From the USPTO record |
| US 6,566,201 | Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion Term ended Term ended Dec 31, 2021 · From the USPTO record | Term ended | Term ended Dec 31, 2021 | From the USPTO record |
| US 6,576,516 | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon Term ended Term ended Dec 31, 2021 · From the USPTO record | Term ended | Term ended Dec 31, 2021 | From the USPTO record |
| US 6,656,797 | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation Term ended Term ended Dec 31, 2021 · From the USPTO record | Term ended | Term ended Dec 31, 2021 | From the USPTO record |
| US 7,224,027 | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon Term ended Term ended Dec 31, 2021 · From the USPTO record | Term ended | Term ended Dec 31, 2021 | From the USPTO record |
| US 6,979,621 | Trench MOSFET having low gate charge Term ended Term ended Dec 10, 2021 · From the USPTO record | Term ended | Term ended Dec 10, 2021 | From the USPTO record |
| US 6,657,254 | Trench MOSFET device with improved on-resistance Term ended Term ended Nov 21, 2021 · From the USPTO record | Term ended | Term ended Nov 21, 2021 | From the USPTO record |