Innoscience (Suzhou) Semiconductor Co., Ltd.
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
0
Ending by 2030
May 2040
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.
- 1 fee due Feb 1, 2027The maintenance fee for Electronic device and electrostatic discharge protection circuit (US 11,715,946) comes due Feb 1, 2027. Unpaid by Aug 2, 2027, it lapses early.
- 1 fee due Sep 26, 2027The maintenance fee for Epitaxial layers with discontinued aluminium content for III-nitride semiconductor (US 11,942,521) comes due Sep 26, 2027. Unpaid by Mar 27, 2028, it lapses early.
- 2 fees due Oct 23, 2027
Recent changes
- 3 of the patents on this record were granted since Aug 17, 2026
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 10,833,159 | Semiconductor device and method for manufacturing the same In force · From the USPTO record | In force | From the USPTO record | |
| US 12,094,931 | Semiconductor device and method for manufacturing the same In force · From the USPTO record | In force | From the USPTO record | |
| US 11,967,519 | Integrated semiconductor device and method for manufacturing the same In force · From the USPTO record | In force | From the USPTO record | |
| US 11,715,946 | Electronic device and electrostatic discharge protection circuit In force · From the USPTO record | In force | From the USPTO record | |
| US 11,967,521 | Integrated semiconductor device and method for manufacturing the same In force · From the USPTO record | In force | From the USPTO record | |
| US 12,402,382 | Nitride-Based Bidirectional Switching Device for Battery Management and Method for Manufacturing the Same In force · Medium confidence | In force | Medium confidence | |
| US 12,336,233 | GaN-based semiconductor device with reduced leakage current and method for manufacturing the same In force · From the USPTO record | In force | From the USPTO record | |
| US 12,352,800 | Apparatus and method for measuring dynamic on-resistance of nitride-based switching device In force · From the USPTO record | In force | From the USPTO record | |
| US 12,132,396 | Nitride-Based Power Factor Correction Circuit and Method for Implementing the Same In force · High confidence | In force | High confidence | |
| US 12,176,703 | Terminal protection network and electronic device In force · From the USPTO record | In force | From the USPTO record |
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.
10 pending · 2 abandoned · 11 no status recorded