Intelligent Sources Development Corp.
Records under this name other than patents Intelligent Sources Development Corp. holds now: patents now held by others, patents whose terms have ended, and its applications, pending or abandoned.
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| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 6,756,631 | Stacked-gate cell structure and its NAND-type flash memory array Lapsed on the fee record Ended Jun 29, 2016 · From the USPTO record | Lapsed on the fee record | Ended Jun 29, 2016 | From the USPTO record |
| US 6,914,291 | Self-aligned floating-gate structure for flash memory device Lapsed on the fee record Ended Jul 5, 2013 · From the USPTO record | Lapsed on the fee record | Ended Jul 5, 2013 | From the USPTO record |
| US 6,765,258 | Stack-gate flash memory cell structure and its contactless flash memory arrays Lapsed on the fee record Ended Jul 20, 2012 · From the USPTO record | Lapsed on the fee record | Ended Jul 20, 2012 | From the USPTO record |
| US 6,750,499 | Self-aligned trench-type dram structure and its contactless dram arrays Lapsed on the fee record Ended Jun 15, 2012 · From the USPTO record | Lapsed on the fee record | Ended Jun 15, 2012 | From the USPTO record |
| US 6,746,915 | Stack-type DRAM memory structure and its manufacturing method Lapsed on the fee record Ended Jun 8, 2012 · From the USPTO record | Lapsed on the fee record | Ended Jun 8, 2012 | From the USPTO record |
| US 6,747,328 | Scaled MOSFET device and its fabricating method Lapsed on the fee record Ended Jun 8, 2012 · From the USPTO record | Lapsed on the fee record | Ended Jun 8, 2012 | From the USPTO record |
| US 6,744,089 | Self-aligned lateral-transistor DRAM cell structure Lapsed on the fee record Ended Jun 1, 2012 · From the USPTO record | Lapsed on the fee record | Ended Jun 1, 2012 | From the USPTO record |
| US 6,734,484 | Vertical transistor DRAM structure and its manufacturing methods Lapsed on the fee record Ended May 11, 2012 · From the USPTO record | Lapsed on the fee record | Ended May 11, 2012 | From the USPTO record |
| US 6,734,485 | Vertical DRAM cell structure and its contactless DRAM arrays Lapsed on the fee record Ended May 11, 2012 · From the USPTO record | Lapsed on the fee record | Ended May 11, 2012 | From the USPTO record |
| US 6,713,393 | Method of forming a nanometer-gate MOSFET device Lapsed on the fee record Ended Mar 30, 2012 · From the USPTO record | Lapsed on the fee record | Ended Mar 30, 2012 | From the USPTO record |