Jsab Technologies (Shenzhen) Ltd.

14 patents currently held · Updated Nov 15, 2026

Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.

Ending by 2030

Dec 2034

Next term end

When these terms end

5 yrs10 yrs20 yrs

Held patents by the year their term ends

20262027202820292030203120322033203420352036203720382039204020412042204320442045

Fee deadlines

Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.

2 fees due Sep 17, 2027
1 fee due Oct 23, 2027
The maintenance fee for Power semiconductor device and manufacturing method thereof (US 11,967,631) comes due Oct 23, 2027. Unpaid by Apr 24, 2028, it lapses early.

Which patents, and when each one lapses · Pro

Recent changes

Nothing was recorded against this company's patents in the last 90 days.

Patents held now

Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.

Patent	Title	Status	Expires	Confidence
US 9,397,178	Split gate power semiconductor field effect transistor In force Term ends Dec 4, 2034 · From the USPTO record	In force	Term ends Dec 4, 2034	From the USPTO record
US 9,755,043	Trench Gate Power Semiconductor Field Effect Transistor In force Term ends Dec 4, 2034 · High confidence	In force	Term ends Dec 4, 2034	High confidence
US 9,825,149	Split gate power semiconductor field effect transistor In force Term ends Dec 4, 2034 · From the USPTO record	In force	Term ends Dec 4, 2034	From the USPTO record
US 9,647,077	Power semiconductor devices having a semi-insulating field plate In force Term ends Dec 10, 2034 · From the USPTO record	In force	Term ends Dec 10, 2034	From the USPTO record
US 10,593,767	Field Plate Structure for Power Semiconductor Device and Manufacturing Method Thereof In force Term ends May 28, 2035 · High confidence	In force	Term ends May 28, 2035	High confidence
US 10,593,788	Reverse-Conducting Insulated-Gate Bipolar Transistor Structure and Corresponding Fabrication Method Thereof In force Term ends Oct 10, 2036 · High confidence	In force	Term ends Oct 10, 2036	High confidence
US 10,692,995	Insulated-gate bipolar transistor structure and method for manufacturing the same In force Term ends Oct 29, 2036 · From the USPTO record	In force	Term ends Oct 29, 2036	From the USPTO record
US 11,004,935	Solid power semiconductor field effect transistor structure In force Term ends May 5, 2037 · From the USPTO record	In force	Term ends May 5, 2037	From the USPTO record
US 11,081,575	Insulated gate bipolar transistor device and method for manufacturing the same In force Term ends Jan 17, 2040 · From the USPTO record	In force	Term ends Jan 17, 2040	From the USPTO record
US 11,967,631	Power semiconductor device and manufacturing method thereof In force Term ends Oct 30, 2043 · From the USPTO record	In force	Term ends Oct 30, 2043	From the USPTO record

10 of 14 patents shown.

Pro members see all 14.

Pro members: see all 14 patents

Sources and methods

Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand. How this record was built

Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.

Export every term end as CSV · Pro

Published applications

Every application published under this name has become a patent.