High-Density Low Voltage Ferroelectric Memory Bit-Cell
A patent family: one line of work, grouped by real continuity rather than by a technology label
inferred from titles. 12 of these applications claim priority to application 17/339,850, filed Jun 4, 2021. A shared origin can cover several different claimed inventions, which is why members here may not share a title. In-force patents first, soonest term end first, then patent number. Expired patents follow, in the same order.
| Patent | Title | Holder | Status | Expires | Time remaining | Confidence |
|---|---|---|---|---|---|---|
| US 11,423,967 | Stacked Ferroelectric Non-Planar Capacitors in a Memory Bit-Cell In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,501,813 | Method of Forming Stacked Ferroelectric Non-Planar Capacitors in a Memory Bit-Cell In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,514,966 | Non-Linear Polar Material Based Multi-Memory Element Bit-Cell with Multi-Level Storage In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,514,967 | Non-Linear Polar Material Based Differential Multi-Memory Element Gain Bit-Cell In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,521,666 | High-Density Low Voltage Multi-Element Ferroelectric Gain Memory Bit-Cell with Planar Capacitors In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,521,667 | Stacked Ferroelectric Planar Capacitors in a Memory Bit-Cell In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,527,277 | High-Density Low Voltage Ferroelectric Memory Bit-Cell In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,527,278 | Non-Linear Polar Material Based Memory Bit-Cell with Multi-Level Storage by Applying Different Time Pulse Widths In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,532,342 | Non-Linear Polar Material Based Differential Multi-Memory Element Bit-Cell In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,532,635 | High-Density Low Voltage Multi-Element Ferroelectric Gain Memory Bit-Cell with Pillar Capacitors In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| 3 more patents in this group · Pro | ||||||
10 of 13 records shown. In-force patents first, soonest term end first, then patent number. Expired patents follow, in the same order.
Pro members see all 13.
Updated Nov 14, 2026 · includes USPTO assignment & status data published Nov 14, 2026 and grant & fee data published Nov 10, 2026 (weekly) · how we know
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.