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Pulsing Scheme for a Ferroelectric Memory Bit-Cell to Minimize Read or Write Disturb Effect and Refresh Logic

Kepler Computing Inc.

A patent family: one line of work, grouped by real continuity rather than by a technology label inferred from titles. 13 of these applications claim priority to application 17/529,258, filed Nov 17, 2021. A shared origin can cover several different claimed inventions, which is why members here may not share a title. In-force patents first, soonest term end first, then patent number. Expired patents follow, in the same order.
PatentTitleHolderStatusExpiresTime remainingConfidence
US 11,482,270Pulsing Scheme for a Ferroelectric Memory Bit-Cell to Minimize Read or Write Disturb Effect and Refresh Logic
In force
 · High confidence
Kepler Computing Inc.In force
High confidence
US 11,521,668Pulsing Scheme for a Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Word-Line to Minimize Read or Write Disturb Effects
In force
 · High confidence
Kepler Computing Inc.In force
High confidence
US 11,532,344Reading Scheme for 1TNC Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Bit-Line and with Individual Switches on Plate-Lines of the Bit-Cell
In force
 · High confidence
Kepler Computing Inc.In force
High confidence
US 11,538,514Writing Scheme for 1TNC Ferroelectric Memory Bit-Cell with Plate-Lines Parallel to a Bit-Line and with Individual Switches on the Plate-Lines of the Bit-Cell
In force
 · High confidence
Kepler Computing Inc.In force
High confidence
US 11,605,413Reading Scheme for Multi-Element Gain Ferroelectric Memory Bit-Cell with Plate-Lines Parallel to a Bit-Line and with Individual Switches on the Plate-Lines of the Bit-Cell
In force
 · Medium confidence
Kepler Computing Inc.In force
Medium confidence
US 11,610,619Pulsing Scheme for a 1TNC Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Word-Line to Minimize Read or Write Disturb Effects
In force
 · Medium confidence
Kepler Computing Inc.In force
Medium confidence
US 11,610,620Pulsing Scheme for a 1TNC Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Bit-Line to Minimize Read or Write Disturb Effects
In force
 · Medium confidence
Kepler Computing Inc.In force
Medium confidence
US 11,646,071Reading Scheme for Multi-Element Gain Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Bit-Line and with Individual Switches and Control on Plate-Lines of the Bit-Cell
In force
 · Medium confidence
Kepler Computing Inc.In force
Medium confidence
US 11,664,060Writing Scheme for Multi-Element Gain Ferroelectric Memory Bit-Cell with Plate-Lines Parallel to a Bit-Line and with Individual Switches on the Plate-Lines of the Bit-Cell
In force
 · Medium confidence
Kepler Computing Inc.In force
Medium confidence
US 11,735,245Read Scheme for Multi-Element Gain Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Word-Line to Minimize Read or Write Disturb Effects
In force
 · High confidence
Kepler Computing Inc.In force
High confidence
4 more patents in this group · Pro
10 of 14 records shown. In-force patents first, soonest term end first, then patent number. Expired patents follow, in the same order.
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Updated Nov 14, 2026 · includes USPTO assignment & status data published Nov 14, 2026 and grant & fee data published Nov 10, 2026 (weekly) · how we know
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
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