Kyma Technologies, Inc.
2 more in force are now held by other companies
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
10
Ending by 2030
Nov 2026
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
No maintenance fee falls due on this company's record before Nov 15, 2027.
Recent changes
Nothing was recorded against this company's patents in the last 90 days.
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 8,202,793 | Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same In force · From the USPTO record | In force | From the USPTO record | |
| US 8,637,848 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement In force · From the USPTO record | In force | From the USPTO record | |
| US 8,871,556 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement In force · From the USPTO record | In force | From the USPTO record | |
| US 9,263,266 | Group III nitride articles and methods for making same In force · From the USPTO record | In force | From the USPTO record | |
| US 9,082,890 | Group III nitride articles having nucleation layers, transitional layers, and bulk layers In force · From the USPTO record | In force | From the USPTO record | |
| US 8,349,711 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement In force · From the USPTO record | In force | From the USPTO record | |
| US 7,777,217 | Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same In force · From the USPTO record | In force | From the USPTO record | |
| US 7,727,874 | Non-polar and semi-polar GaN substrates, devices, and methods for making them In force · From the USPTO record | In force | From the USPTO record | |
| US 8,435,879 | Method for making group III nitride articles In force · From the USPTO record | In force | From the USPTO record | |
| US 7,897,490 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement In force · From the USPTO record | In force | From the USPTO record |
Also on record, not counted in the 11: 2 patents in force now held by others · 12 ended at full term. List them
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.
2 no status recorded