Longitude Flash Memory Solutions Ltd.
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
Recorded under 2 name spellings.
145
Ending by 2030
Dec 2026
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.
- 1 fee due Nov 28, 2026The maintenance fee for Radical Oxidation Process For Fabricating A Nonvolatile Charge Trap Memory Device (US 10,304,968) comes due Nov 28, 2026. Unpaid by May 28, 2027, it lapses early.
- 3 fees due Dec 4 to 25, 2026 · next Dec 4
- 2 fees due Jan 14 to 28, 2027 · next Jan 14
- 5 fees due Feb 6 to 11, 2027 · next Feb 6
- 6 fees due Mar 1 to 24, 2027 · next Mar 1
- 3 fees due Apr 15 to 29, 2027 · next Apr 15
- 1 fee due May 24, 2027The maintenance fee for Method of Integrating a Charge-Trapping Gate Stack into a CMOS Flow (US 9,196,496) comes due May 24, 2027. Unpaid by Nov 24, 2027, it lapses early.
- 3 fees due Jun 8 to 22, 2027 · next Jun 8
- 1 fee due Sep 29, 2027The maintenance fee for Sonos Ono Stack Scaling (US 9,299,568) comes due Sep 29, 2027. Unpaid by Mar 29, 2028, it lapses early.
- 2 fees due Oct 2 to 5, 2027 · next Oct 2
Recent changes
- 6 terms have ended since Aug 16, 2026
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 7,471,135 | Multiplexer Circuit In force · High confidence | In force | High confidence | |
| US 7,750,407 | Strapping Contact for Charge Protection In force · High confidence | In force | High confidence | |
| US 7,999,590 | Level-converting flip-flop and pulse generator for clustered voltage scaling In force · From the USPTO record | In force | From the USPTO record | |
| US 7,586,788 | Nonvolatile Semiconductor Memory Having Voltage Adjusting Circuit In force · High confidence | In force | High confidence | |
| US 7,915,663 | Fabrication and Method of Operation of Multi-Level Memory Cell on Soi Substrate In force · High confidence | In force | High confidence | |
| US 8,643,124 | Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers In force · High confidence | In force | High confidence | |
| US 9,349,824 | Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers In force · High confidence | In force | High confidence | |
| US 9,355,849 | Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers In force · High confidence | In force | High confidence | |
| US 9,449,831 | Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers In force · High confidence | In force | High confidence | |
| US 10,374,067 | Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers In force · High confidence | In force | High confidence |
Also on record, not counted in the 241: 25 lapsed for an unpaid fee · 93 ended at full term. List them
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.
4 abandoned · 11 no status recorded