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Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
0
Ending by 2030
Jul 2038
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.
- 1 fee due Apr 10, 2027The maintenance fee for Memory Device Having Variable Impedance Memory Cells and Time-To-Transition Sensing of Data Stored Therein (US 11,783,891) comes due Apr 10, 2027. Unpaid by Oct 12, 2027, it lapses early.
- 1 fee due Aug 13, 2027The maintenance fee for Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein (US 11,900,990) comes due Aug 13, 2027. Unpaid by Feb 14, 2028, it lapses early.
- 1 fee due Oct 21, 2027The maintenance fee for Memory Device Having Variable Impedance Memory Cells and Time-To-Transition Sensing of Data Stored Therein (US 10,629,256) comes due Oct 21, 2027. Unpaid by Apr 21, 2028, it lapses early.
Recent changes
- 1 of the patents on this record was granted since Aug 17, 2026
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 10,236,053 | Method and Circuit Device Incorporating Time-To-Transition Signal Node Sensing In force · High confidence | In force | High confidence | |
| US 10,269,413 | Memory Device Having Variable Impedance Memory Cells and Time-To-Transition Sensing of Data Stored Therein In force · High confidence | In force | High confidence | |
| US 10,629,256 | Memory Device Having Variable Impedance Memory Cells and Time-To-Transition Sensing of Data Stored Therein In force · High confidence | In force | High confidence | |
| US 10,796,748 | Method and Circuit Device Incorporating Time-To-Transition Signal Node Sensing In force · Low confidence | In force | Low confidence | |
| US 10,796,749 | Memory Device Having Variable Impedance Memory Cells and Time-To-Transition Sensing of Data Stored Therein In force · High confidence | In force | High confidence | |
| US 11,049,553 | Memory Device Having Variable Impedance Memory Cells and Time-To-Transition Sensing of Data Stored Therein In force · High confidence | In force | High confidence | |
| US 11,195,574 | Memory Device Having Variable Impedance Memory Cells and Time-To-Transition Sensing of Data Stored Therein In force · Medium confidence | In force | Medium confidence | |
| US 11,501,826 | Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein In force · From the USPTO record | In force | From the USPTO record | |
| US 11,783,891 | Memory Device Having Variable Impedance Memory Cells and Time-To-Transition Sensing of Data Stored Therein In force · High confidence | In force | High confidence | |
| US 11,900,990 | Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein In force · From the USPTO record | In force | From the USPTO record |
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
Every application published under this name has become a patent.