Semiq Incorporated
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
0
Ending by 2030
Dec 2033
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.
- 1 fee due Feb 15, 2027The maintenance fee for Counter-doped silicon carbide Schottky barrier diode (US 11,728,440) comes due Feb 15, 2027. Unpaid by Aug 16, 2027, it lapses early.
- 2 fees due Mar 5 to 12, 2027 · next Mar 5
- 1 fee due Jun 22, 2027The maintenance fee for Silicon carbide semiconductor devices (US 9,219,122) comes due Jun 22, 2027. Unpaid by Dec 22, 2027, it lapses early.
- 1 fee due Sep 1, 2027The maintenance fee for Protective interface in silicon carbide semiconductor devices (US 9,276,069) comes due Sep 1, 2027. Unpaid by Mar 1, 2028, it lapses early.
Recent changes
Nothing was recorded against this company's patents in the last 90 days.
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 9,590,067 | Silicon carbide semiconductor devices having nitrogen-doped interface In force · From the USPTO record | In force | From the USPTO record | |
| US 9,613,810 | Silicon carbide semiconductor devices having nitrogen-doped interface In force · From the USPTO record | In force | From the USPTO record | |
| US 9,276,069 | Protective interface in silicon carbide semiconductor devices In force · From the USPTO record | In force | From the USPTO record | |
| US 9,219,122 | Silicon carbide semiconductor devices In force · From the USPTO record | In force | From the USPTO record | |
| US 10,950,695 | Silicon carbide planar MOSFET with wave-shaped channel regions In force · From the USPTO record | In force | From the USPTO record | |
| US 11,728,440 | Counter-doped silicon carbide Schottky barrier diode In force · From the USPTO record | In force | From the USPTO record | |
| US 11,631,773 | Counter-doped silicon carbide Schottky barrier diode In force · From the USPTO record | In force | From the USPTO record | |
| US 11,469,333 | Counter-doped silicon carbide Schottky barrier diode In force · From the USPTO record | In force | From the USPTO record | |
| US 11,605,713 | Silicon Carbide Planar MOSFET With Wave-Shaped Channel Regions In force · Medium confidence | In force | Medium confidence | |
| US 11,756,954 | Silicon Carbide MOSFET With Optional Asymmetric Gate Clamp In force · High confidence | In force | High confidence |
Also on record, not counted in the 12: 2 lapsed for an unpaid fee. List them
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
Every application published under this name has become a patent.