Semiwise Limited

8 patents currently held · Updated Nov 14, 2026

Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.

Ending by 2030

Mar 2032

Next term end

When these terms end

5 yrs10 yrs20 yrs

Held patents by the year their term ends

20262027202820292030203120322033203420352036203720382039204020412042204320442045

Fee deadlines

Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.

1 fee due Mar 12, 2027
The maintenance fee for Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation (US 11,757,002) comes due Mar 12, 2027. Unpaid by Sep 13, 2027, it lapses early.
1 fee due May 17, 2027
The maintenance fee for Fluctuation resistant FDSOI transistor with implanted subchannel (US 9,190,485) comes due May 17, 2027. Unpaid by Nov 17, 2027, it lapses early.
2 fees due Aug 16 to 23, 2027 · next Aug 16
1 fee due Oct 12, 2027
The maintenance fee for Manufacture of a variation resistant metal-oxide-semiconductor field effect transistor (MOSFET) (US 9,312,362) comes due Oct 12, 2027. Unpaid by Apr 12, 2028, it lapses early.

Which patents, and when each one lapses · Pro

Recent changes

Nothing was recorded against this company's patents in the last 90 days.

Patents held now

Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.

Showing 1 to 8 of 8

Patent	Title	Status	Expires	Confidence
US 9,312,362	Manufacture of a variation resistant metal-oxide-semiconductor field effect transistor (MOSFET) In force Term ends Mar 20, 2032 · From the USPTO record	In force	Term ends Mar 20, 2032	From the USPTO record
US 9,373,684	Method of manufacturing variation resistant metal-oxide-semiconductor field effect transistor (MOSFET) In force Ends no later than Mar 20, 2032 · From the USPTO record	In force	Ends no later than Mar 20, 2032	From the USPTO record
US 8,994,123	Variation Resistant Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) In force Term ends Apr 18, 2032 · High confidence	In force	Term ends Apr 18, 2032	High confidence
US 9,190,485	Fluctuation resistant FDSOI transistor with implanted subchannel In force Term ends Jul 25, 2033 · From the USPTO record	In force	Term ends Jul 25, 2033	From the USPTO record
US 9,263,568	Fluctuation resistant low access resistance fully depleted SOI transistor with improved channel thickness control and reduced access resistance In force Term ends Jul 25, 2033 · From the USPTO record	In force	Term ends Jul 25, 2033	From the USPTO record
US 9,269,804	Gate recessed FDSOI transistor with sandwich of active and etch control layers In force Term ends Jul 25, 2033 · From the USPTO record	In force	Term ends Jul 25, 2033	From the USPTO record
US 11,049,939	Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation In force Term ends Aug 2, 2036 · From the USPTO record	In force	Term ends Aug 2, 2036	From the USPTO record
US 11,757,002	Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation In force Term ends May 31, 2037 · From the USPTO record	In force	Term ends May 31, 2037	From the USPTO record

Also on record, not counted in the 8: 2 lapsed for an unpaid fee. List them

Sources and methods

Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand. How this record was built

Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.

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Published applications

US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.

1 no status recorded

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