Shanghai Simgui Technology Co., Ltd.
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
Recorded under 2 name spellings.
1
Ending by 2030
Aug 2030
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.
- 1 fee due Jan 23, 2027The maintenance fee for Method for preparing substrate with carrier trapping center (US 10,361,114) comes due Jan 23, 2027. Unpaid by Jul 23, 2027, it lapses early.
- 1 fee due Feb 20, 2027The maintenance fee for Method for preparing substrate with insulated buried layer (US 10,388,529) comes due Feb 20, 2027. Unpaid by Aug 20, 2027, it lapses early.
- 1 fee due Jul 7, 2027The maintenance fee for Annealing method for improving bonding strength (US 10,529,590) comes due Jul 7, 2027. Unpaid by Jan 7, 2028, it lapses early.
- 1 fee due Sep 29, 2027The maintenance fee for Method for preparing semiconductor substrate with insulating buried layer gettering process (US 9,299,556) comes due Sep 29, 2027. Unpaid by Mar 29, 2028, it lapses early.
- 1 fee due Oct 14, 2027The maintenance fee for Method for cleaning bonding interface before bonding (US 10,618,082) comes due Oct 14, 2027. Unpaid by Apr 14, 2028, it lapses early.
Recent changes
Nothing was recorded against this company's patents in the last 90 days.
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
Showing 1 to 9 of 9
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 8,633,090 | Method for forming substrate with buried insulating layer In force · From the USPTO record | In force | From the USPTO record | |
| US 9,299,556 | Method for preparing semiconductor substrate with insulating buried layer gettering process In force · From the USPTO record | In force | From the USPTO record | |
| US 11,158,702 | Gallium nitride high electron mobility transistor having high breakdown voltage and formation method therefor In force · From the USPTO record | In force | From the USPTO record | |
| US 10,361,114 | Method for preparing substrate with carrier trapping center In force · From the USPTO record | In force | From the USPTO record | |
| US 10,388,529 | Method for preparing substrate with insulated buried layer In force · From the USPTO record | In force | From the USPTO record | |
| US 10,529,590 | Annealing method for improving bonding strength In force · From the USPTO record | In force | From the USPTO record | |
| US 10,618,082 | Method for cleaning bonding interface before bonding In force · From the USPTO record | In force | From the USPTO record | |
| US 11,094,534 | Surface oxidation method for wafer In force · From the USPTO record | In force | From the USPTO record | |
| US 11,393,772 | Bonding method for semiconductor substrate, and bonded semiconductor substrate In force · From the USPTO record | In force | From the USPTO record |
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.
6 no status recorded