Sixpoint Materials, Inc.

47 patents currently held · Updated Nov 14, 2026

2 more in force are now held by other companies

Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.

Ending by 2030

Jun 2029

Next term end

When these terms end

5 yrs10 yrs20 yrs

Held patents by the year their term ends

20262027202820292030203120322033203420352036203720382039204020412042204320442045

Fee deadlines

Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.

1 fee due Nov 14, 2026
The maintenance fee for Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method (US 10,287,709) comes due Nov 14, 2026. Unpaid by May 14, 2027, it lapses early.
1 fee due Dec 11, 2026
The maintenance fee for Method of Growing Group III Nitride Crystals (US 10,316,431) comes due Dec 11, 2026. Unpaid by Jun 11, 2027, it lapses early.
2 fees due Jan 16, 2027
1 fee due Feb 28, 2027
The maintenance fee for Terahertz Gunn oscillator using gallium nitride (US 11,742,800) comes due Feb 28, 2027. Unpaid by Aug 30, 2027, it lapses early.
1 fee due Mar 26, 2027
The maintenance fee for Low-dislocation bulk GaN crystal and method of fabricating same (US 11,767,609) comes due Mar 26, 2027. Unpaid by Sep 27, 2027, it lapses early.
2 fees due Jun 1 to 29, 2027 · next Jun 1
1 fee due Aug 9, 2027
The maintenance fee for Bismuth-Doped Semi-Insulating Group III Nitride Wafer and Its Production Method (US 9,255,342) comes due Aug 9, 2027. Unpaid by Feb 9, 2028, it lapses early.
1 fee due Oct 5, 2027
The maintenance fee for Electronic Device Using Group III Nitride Semiconductor Having Specified Dislocation Density, Oxygen/Electron Concentration, and Active Layer Thickness (US 9,305,772) comes due Oct 5, 2027. Unpaid by Apr 5, 2028, it lapses early.

Which patents, and when each one lapses · Pro

Recent changes

Nothing was recorded against this company's patents in the last 90 days.

Patents held now

Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.

Patent	Title	Status	Expires	Confidence
US 8,420,041	High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal In force Term ends Jun 4, 2029 · From the USPTO record	In force	Term ends Jun 4, 2029	From the USPTO record
US 8,557,043	Method for testing group III-nitride wafers and group III-nitride wafers with test data In force Term ends Jun 12, 2029 · From the USPTO record	In force	Term ends Jun 12, 2029	From the USPTO record
US 8,585,822	Method for testing group III-nitride wafers and group III-nitride wafers with test data In force Ends no later than Jun 12, 2029 · From the USPTO record	In force	Ends no later than Jun 12, 2029	From the USPTO record
US 8,236,267	High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal In force Term ends Dec 26, 2029 · From the USPTO record	In force	Term ends Dec 26, 2029	From the USPTO record
US 10,087,548	High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal In force Term ends Apr 19, 2030 · From the USPTO record	In force	Term ends Apr 19, 2030	From the USPTO record
US 9,441,311	Growth Reactor for Gallium-Nitride Crystals Using Ammonia and Hydrogen Chloride In force Ends no later than Jul 15, 2030 · Medium confidence	In force	Ends no later than Jul 15, 2030	Medium confidence
US 9,985,102	Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth In force Term ends Dec 2, 2030 · From the USPTO record	In force	Term ends Dec 2, 2030	From the USPTO record
US 8,728,234	Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth In force Term ends Oct 20, 2031 · From the USPTO record	In force	Term ends Oct 20, 2031	From the USPTO record
US 8,357,243	Method for testing group III-nitride wafers and group III-nitride wafers with test data In force Term ends Nov 23, 2031 · From the USPTO record	In force	Term ends Nov 23, 2031	From the USPTO record
US 8,971,018	Ultracapacitors Using Transition Metal Nitride-Containing Electrode and Transition Metal Nitride In force Term ends Jun 15, 2032 · High confidence	In force	Term ends Jun 15, 2032	High confidence

10 of 47 patents shown.

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Pro members: see all 47 patents

Also on record, not counted in the 47: 2 patents in force now held by others · 1 lapsed for an unpaid fee. List them

Sources and methods

Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand. How this record was built

Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.

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Published applications

US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.

1 pending · 6 abandoned · 9 no status recorded

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