SK Siltron CSS, LLC

18 patents currently held · Updated Nov 14, 2026

Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.

Ending by 2030

Feb 2028

Next term end

When these terms end

5 yrs10 yrs20 yrs

Held patents by the year their term ends

20262027202820292030203120322033203420352036203720382039204020412042204320442045

Fee deadlines

Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.

1 fee due Jan 9, 2027
The maintenance fee for Furnace for Seeded Sublimation of Wide Band Gap Crystals (US 10,344,396) comes due Jan 9, 2027. Unpaid by Jul 9, 2027, it lapses early.
2 fees due Apr 8 to 20, 2027 · next Apr 8
1 fee due Sep 8, 2027
The maintenance fee for Method for Manufacturing Sic Wafer Fit for Integration with Power Device Manufacturing Technology (US 9,279,192) comes due Sep 8, 2027. Unpaid by Mar 8, 2028, it lapses early.
1 fee due Nov 10, 2027
The maintenance fee for High Voltage Power Semiconductor Device on Sic (US 9,337,277) comes due Nov 10, 2027. Unpaid by May 10, 2028, it lapses early.

Which patents, and when each one lapses · Pro

Recent changes

Nothing was recorded against this company's patents in the last 90 days.

Patents held now

Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.

Patent	Title	Status	Expires	Confidence
US 9,337,027	Method of Manufacturing Substrates Having Improved Carrier Lifetimes In force Term ends Feb 15, 2028 · Medium confidence	In force	Term ends Feb 15, 2028	Medium confidence
US 8,343,854	Method of Reducing Memory Effects in Semiconductor Epitaxy In force Term ends Sep 29, 2029 · High confidence	In force	Term ends Sep 29, 2029	High confidence
US 8,765,091	Method to Manufacture Large Uniform Ingots of Silicon Carbide by Sublimation/Condensation Processes In force Term ends Dec 18, 2029 · High confidence	In force	Term ends Dec 18, 2029	High confidence
US 9,017,804	Method to Reduce Dislocations in Sic Crystal Growth In force Term ends Jul 8, 2033 · High confidence	In force	Term ends Jul 8, 2033	High confidence
US 8,860,040	High Voltage Power Semiconductor Devices on Sic In force Term ends Aug 6, 2033 · High confidence	In force	Term ends Aug 6, 2033	High confidence
US 9,018,639	Flat Sic Semiconductor Substrate In force Term ends Aug 6, 2033 · High confidence	In force	Term ends Aug 6, 2033	High confidence
US 9,165,779	Flat Sic Semiconductor Substrate In force Term ends Aug 6, 2033 · High confidence	In force	Term ends Aug 6, 2033	High confidence
US 9,337,277	High Voltage Power Semiconductor Device on Sic In force Term ends Aug 6, 2033 · High confidence	In force	Term ends Aug 6, 2033	High confidence
US 10,106,912	Reaction Cell for Growing Sic Crystal with Low Dislocation Density In force Term ends Aug 9, 2033 · High confidence	In force	Term ends Aug 9, 2033	High confidence
US 10,435,810	Graphite Crucible for Sublimation Growth of Sic Crystal In force Term ends Aug 9, 2033 · High confidence	In force	Term ends Aug 9, 2033	High confidence

10 of 18 patents shown.

Pro members see all 18.

Pro members: see all 18 patents

Sources and methods

Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand. How this record was built

Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.

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Published applications

Every application published under this name has become a patent.