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Resistive Memory Cell Having an Ovonic Threshold Switch

Stmicroelectronics (Rousset) SAS

A patent family: one line of work, grouped by real continuity rather than by a technology label inferred from titles. 2 of these applications claim priority to application 16/566,794, filed Sep 10, 2019. A shared origin can cover several different claimed inventions, which is why members here may not share a title. In-force patents first, soonest term end first, then patent number. Expired patents follow, in the same order.
PatentTitleHolderStatusExpiresTime remainingConfidence
US 11,637,144Method of Forming Resistive Memory Cell Having an Ovonic Threshold Switch
In force
 · High confidence
STMicroelectronics (Rousset) SASIn force
High confidence
US 12,096,640Resistive Memory Cell Having an Ovonic Threshold Switch
In force
 · High confidence
STMicroelectronics (Rousset) SASIn force
High confidence
US 11,114,502Resistive Memory Cell Having an Ovonic Threshold Switch
In force
 · High confidence
Stmicroelectronics (Rousset) SASIn force
High confidence
Application 18/807,821Resistive Memory Cell Having an Ovonic Threshold Switch
Pending
Not granted
Stmicroelectronics (Rousset) SASPendingNot grantednot computed
4 of 4 records shown. In-force patents first, soonest term end first, then patent number. Expired patents follow, in the same order.
3 of these are in force and held by Stmicroelectronics (Rousset) SAS.
Updated Nov 15, 2026 · includes USPTO assignment & status data published Nov 15, 2026 and grant & fee data published Nov 10, 2026 (weekly) · how we know
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
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