Svagos Technik, Inc.
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
Recorded under 2 name spellings.
5
Ending by 2030
Feb 2029
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
No maintenance fee falls due on this company's record before Nov 15, 2027.
Recent changes
Nothing was recorded against this company's patents in the last 90 days.
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 8,663,753 | High throughput multi-wafer epitaxial reactor In force (reinstated) · From the USPTO record | In force (reinstated) | From the USPTO record | |
| US 9,556,522 | High throughput multi-wafer epitaxial reactor In force · From the USPTO record | In force | From the USPTO record | |
| US 8,030,119 | Integrated method and system for manufacturing monolithic panels of crystalline solar cells In force · From the USPTO record | In force | From the USPTO record | |
| US 9,920,451 | High throughput multi-wafer epitaxial reactor In force · From the USPTO record | In force | From the USPTO record | |
| US 8,298,629 | High throughput multi-wafer epitaxial reactor In force · From the USPTO record | In force | From the USPTO record | |
| US 8,673,081 | High throughput multi-wafer epitaxial reactor In force · From the USPTO record | In force | From the USPTO record | |
| US 8,809,097 | Passivated emitter rear locally patterned epitaxial solar cell In force (reinstated) · From the USPTO record | In force (reinstated) | From the USPTO record | |
| US 8,609,451 | Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells In force · From the USPTO record | In force | From the USPTO record | |
| US 9,982,363 | Silicon wafers by epitaxial deposition In force · From the USPTO record | In force | From the USPTO record | |
| US 10,847,421 | Semiconductor layer separation from single crystal silicon substrate by infrared irradiation of porous silicon separation layer In force · From the USPTO record | In force | From the USPTO record |
Also on record, not counted in the 11: 9 lapsed for an unpaid fee. List them
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.
1 no status recorded