Third Dimension (3D) Semiconductor, Inc.
Records under this name other than patents Third Dimension (3D) Semiconductor, Inc. holds now: patents now held by others, patents whose terms have ended, and its applications, pending or abandoned.
Back to Third Dimension (3D) Semiconductor, Inc.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 7,622,787 | Process for high voltage superjunction termination Lapsed on the fee record Ended Nov 24, 2017 · From the USPTO record | Lapsed on the fee record | Ended Nov 24, 2017 | From the USPTO record |
| US 7,504,305 | Technique for Forming the Deep Doped Regions in Superjunction Devices Lapsed on the fee record Ended Mar 17, 2017 · Medium confidence | Lapsed on the fee record | Ended Mar 17, 2017 | Medium confidence |
| US 7,439,583 | Tungsten plug drain extension Lapsed on the fee record Ended Oct 21, 2016 · From the USPTO record | Lapsed on the fee record | Ended Oct 21, 2016 | From the USPTO record |
| US 7,410,891 | Method of manufacturing a superjunction device Lapsed on the fee record Ended Aug 12, 2016 · From the USPTO record | Lapsed on the fee record | Ended Aug 12, 2016 | From the USPTO record |
| US 7,364,994 | Method for Manufacturing a Superjunction Device with Wide Mesas Lapsed on the fee record Ended Apr 29, 2016 · Medium confidence | Lapsed on the fee record | Ended Apr 29, 2016 | Medium confidence |
| US 7,354,818 | Process for high voltage superjunction termination Lapsed on the fee record Ended Apr 8, 2016 · From the USPTO record | Lapsed on the fee record | Ended Apr 8, 2016 | From the USPTO record |
| US 7,339,252 | Semiconductor having thick dielectric regions Lapsed on the fee record Ended Mar 4, 2016 · From the USPTO record | Lapsed on the fee record | Ended Mar 4, 2016 | From the USPTO record |
| US 7,977,745 | Tungsten plug drain extension Lapsed on the fee record Ended Jul 12, 2015 · From the USPTO record | Lapsed on the fee record | Ended Jul 12, 2015 | From the USPTO record |
| US 7,199,006 | Planarization method of manufacturing a superjunction device Lapsed on the fee record Ended Apr 3, 2015 · From the USPTO record | Lapsed on the fee record | Ended Apr 3, 2015 | From the USPTO record |
| US 8,071,450 | Method for Forming Voltage Sustaining Layer with Opposite-Doped Islands for Semiconductor Power Devices Term ended Ended no later than Nov 21, 2014 · Low confidence | Term ended | Ended no later than Nov 21, 2014 | Low confidence |