Wolfspeed, Inc.
177 more in force are now held by other companies
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
Previously recorded as Cree, Inc. (to 2021)
30
Ending by 2030
Nov 2026
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.
- 4 fees due Nov 23 to 30, 2026 · next Nov 23
- 4 fees due Dec 16 to 25, 2026 · next Dec 16
- 3 fees due Jan 4 to 28, 2027 · next Jan 4
- 8 fees due Feb 8 to 28, 2027 · next Feb 8
- 6 fees due Mar 3 to 26, 2027 · next Mar 3
- 4 fees due Apr 10 to 17, 2027 · next Apr 10
- 4 fees due May 5 to 28, 2027 · next May 5
- 6 fees due Jun 5 to 15, 2027 · next Jun 5
- 8 fees due Jul 2 to 30, 2027 · next Jul 2
- 5 fees due Aug 18 to 27, 2027 · next Aug 18
- 8 fees due Sep 1 to 24, 2027 · next Sep 1
- 5 fees due Oct 7 to 19, 2027 · next Oct 7
- 1 fee due Nov 10, 2027The maintenance fee for Sic Devices with High Blocking Voltage Terminated by a Negative Bevel (US 9,337,268) comes due Nov 10, 2027. Unpaid by May 10, 2028, it lapses early.
Recent changes
- 19 of the patents on this record were granted since Aug 16, 2026
- 1 term has ended since Aug 16, 2026
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 7,893,500 | High Voltage Gan Transistors In force · High confidence | In force | High confidence | |
| US 8,169,005 | High Voltage Gan Transistors In force · High confidence | In force | High confidence | |
| US 7,629,616 | Silicon Carbide Self-Aligned Epitaxial MOSFET for High Powered Device Applications In force · High confidence | In force | High confidence | |
| US 7,994,017 | Method of Manufacturing Silicon Carbide Self-Aligned Epitaxial MOSFET for High Powered Device Applications In force · High confidence | In force | High confidence | |
| US 8,324,005 | Methods of Fabricating Nitride Semiconductor Structures with Interlayer Structures In force · High confidence | In force | High confidence | |
| US 7,638,811 | Graded Dielectric Layer In force · High confidence | In force | High confidence | |
| US 7,696,584 | Reduced Leakage Power Devices by Inversion Layer Surface Passivation In force · Medium confidence | In force | Medium confidence | |
| US 7,719,025 | Integrated Circuit ESD Protection In force · High confidence | In force | High confidence | |
| US 7,825,432 | Nitride Semiconductor Structures with Interlayer Structures In force · High confidence | In force | High confidence | |
| US 8,946,726 | Grid-Umosfet with Electric Field Shielding of Gate Oxide In force · High confidence | In force | High confidence |
Also on record, not counted in the 362: 177 patents in force now held by others · 9 lapsed for an unpaid fee · 133 ended at full term · 3 surrendered on reissue. List them
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.
154 pending · 4 abandoned