Zing Semiconductor Corporation
1 more in force is now held by another company
Held is read from USPTO's recorded assignments; a transfer never recorded there does not appear.
0
Ending by 2030
Jan 2036
Next term end
When these terms end
Held patents by the year their term ends
20262027202820292030203120322033203420352036203720382039204020412042204320442045
Fee deadlines
Maintenance fees fall due 3.5, 7.5 and 11.5 years after grant. A missed fee ends a patent at the end of the six month grace period that follows, not on the due date.
- 1 fee due Aug 4, 2027The maintenance fee for Complementary metal-oxide-semiconductor field-effect transistor and method thereof (US 10,553,496) comes due Aug 4, 2027. Unpaid by Feb 4, 2028, it lapses early.
- 1 fee due Sep 5, 2027The maintenance fee for Method for detecting temperature of thermal chamber (US 11,923,254) comes due Sep 5, 2027. Unpaid by Mar 6, 2028, it lapses early.
Recent changes
Nothing was recorded against this company's patents in the last 90 days.
Patents held now
Soonest term end first. Each date below is computed on that patent's own page, which shows the rule, the adjustments and the fee history it was derived from.
| Patent | Title | Status | Expires | Confidence |
|---|---|---|---|---|
| US 9,647,107 | Fabrication method for forming vertical transistor on hemispherical or polygonal patterned semiconductor substrate In force · From the USPTO record | In force | From the USPTO record | |
| US 9,634,151 | High voltage junctionless field effect device and its method of fabrication In force · From the USPTO record | In force | From the USPTO record | |
| US 9,818,844 | High-voltage junctionless device with drift region and the method for making the same In force · From the USPTO record | In force | From the USPTO record | |
| US 9,634,133 | Method of forming fin structure on patterned substrate that includes depositing quantum well layer over fin structure In force · From the USPTO record | In force | From the USPTO record | |
| US 9,773,670 | Method of preparation of III-V compound layer on large area Si insulating substrate In force · From the USPTO record | In force | From the USPTO record | |
| US 9,721,846 | Hybrid integration fabrication of nanowire gate-all-around GE PFET and polygonal III-V PFET CMOS device In force · From the USPTO record | In force | From the USPTO record | |
| US 9,640,615 | Method for making III-V nanowire quantum well transistor In force · From the USPTO record | In force | From the USPTO record | |
| US 9,837,517 | Method for making III-V nanowire quantum well transistor In force · From the USPTO record | In force | From the USPTO record | |
| US 9,875,943 | Complementary metal-oxide-semiconductor field-effect transistor and method thereof In force · From the USPTO record | In force | From the USPTO record | |
| US 9,793,285 | Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory and the method for making the same In force · From the USPTO record | In force | From the USPTO record |
Also on record, not counted in the 40: 1 patent in force now held by others. List them
Sources and methods
Compiled from the USPTO record, grants, published applications and recorded assignments, not yet reviewed by hand.
How this record was built
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.
Published applications
US patent applications published under this name that have not become patents. An application is published about eighteen months after its earliest filing; one that has not been published is in no public record.
7 pending · 9 abandoned · 42 no status recorded